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| FDP2614 200V N-Channel PowerTrench MOSFET November 2007 FDP2614 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. tm Description * * * * * * 62A, 200V, RDS(on) = 22.9m @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant Application * PDP application D G GDS TO-220 S Absolute Maximum Ratings Symbol VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 3) Parameter Ratings 200 30 62 39.3 see Figure 9 145 4.5 260 2.1 -55 to +150 300 Unit V V A A A mJ V/ns W W/C C C Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. --- Max. 0.48 62.5 Unit C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP2614 Rev. A FDP2614 200V N-Channel PowerTrench MOSFET Package Marking and Ordering Information Device Marking FDP2614 Device FDP2614 Package TO-220 TC = 25C unless otherwise noted Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 31A VDS = 10V, ID = 31A (Note 4) Min 200 -----3.0 ---- Typ -0.2 ----4.0 22.9 72 5435 505 110 77 284 103 162 76 35 18 ---145 0.81 Max Units --10 500 100 -100 5.0 27 -7230 675 165 165 560 220 335 99 --62 186 1.2 --V V/C A A nA nA V m S pF pF pF ns ns ns ns nC nC nC A A V ns C On Characteristics Dynamic Characteristics VDS = 25V, VGS = 0V f = 1.0MHz ---VDD = 100V, ID = 62A VGS = 10V, RGEN = 25 (Note 4, 5) Switching Characteristics ----VDS = 100V, ID = 62A VGS = 10V -(Note 4, 5) ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 62A VGS = 0V, IS = 62A dIF/dt =100A/s (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 62A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP2614 Rev. A 2 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET Figure 1. On-Region Characteristics 500 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics 1000 * Notes : 1. V DS = 10V 2. 250s Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] 100 150 C o 10 10 -55 C 25 C o o * Notes : 1. 250s Pulse Test 1 0.1 2. T C = 25 C o 1 V DS,Drain-Source Voltage[V] 10 1 2 4 6 V GS ,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.06 * Note : T J = 25 C o Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 * Notes : 1. VGS = 0V 2. ID = 250A 0.05 IDR, Reverse Drain Current [A] Drain-Source On-Resistance 100 RDS(ON) [], T A = 150 C o o 0.04 VGS = 10V T A = 25 C 0.03 VGS = 20V 10 0.02 0 50 100 150 ID, Drain Current [A] 200 0.015 1 0.2 0.4 0.6 0.8 1.0 1.2 V SD , Source-Drain voltage [V] Figure 5. Capacitance Characteristics 9000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Figure 6. Gate Charge Characteristics 10 V DS = 40V VGS, Gate-Source Voltage [V] C iss 8 V DS = 100V V DS = 160V Capacitances [pF] 6000 C oss 6 4 3000 C rss * Note: 1. VGS = 0V 2. f = 1MHz 2 * Note : ID = 62A 0 0.1 1 10 V DS, Drain-Source Voltage [V] 30 0 0 20 40 60 80 Q g , Total Gate Charge [nC] 100 FDP2614 Rev. A 3 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 * Notes : 1. VGS = 10V 2. ID = 31A BVDSS, [Normalized] 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.8 -100 rDS(on), [Normalized] 1.1 -50 0 50 100 o T J, Junction Temperature [ C] 150 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 Figure 10. Maximum Drain Current vs. CaseTemperature 70 60 ID, Drain Current [A] 100 100 s 10 Operation in This Area is Limited by R DS(on) * Notes : o 1ms 10 ms ID, Drain Current [A] 400 50 40 30 20 10 0 25 1 DC 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 10 0 Thermal Response [ZJC] 0.5 10 -1 0.2 0.1 0.05 PDM t1 * Notes : 1. ZJC(t) = 0.48 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -2 0.02 0.01 t2 o Single pulse 10 -3 10 -5 10 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] FDP2614 Rev. A 4 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP2614 Rev. A 5 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP2614 Rev. A 6 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) ) (45 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 FDP2614 Rev. A 7 www.fairchildsemi.com FDP2614 200V N-Channel PowerTrench MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 8 FDP2614 Rev. A www.fairchildsemi.com |
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